TY - JOUR
T1 - Dependence of efficiency-droop effect on the location of high indium layer in staggered InGaN quantum wells
AU - Yao, Y. C.
AU - Tsai, M. T.
AU - Lee, Y. J.
AU - Chen, Y. C.
AU - Wu, Chien-Jang
N1 - Funding Information:
C.-J. Wu acknowledges the financial support from the National Science Council (NSC) of the Republic of China (R.O.C., Taiwan) under Contract No. NSC-100-2112-M-003-005-MY3.
Funding Information:
Y.-J. Lee gratefully acknowledges the financial support from the National Science Council of Republic of China (ROC) in Taiwan under contract No. NSC-100-2112-M-003-006-MY3 and from the National Taiwan Normal University under NTNU100-D-01.
PY - 2011
Y1 - 2011
N2 - Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530 nm) can ensure an extremely low efficiency droop of 11.3%.
AB - Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530 nm) can ensure an extremely low efficiency droop of 11.3%.
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U2 - 10.1163/156939311798806194
DO - 10.1163/156939311798806194
M3 - Article
AN - SCOPUS:84255175462
SN - 0920-5071
VL - 25
SP - 2442
EP - 2453
JO - Journal of Electromagnetic Waves and Applications
JF - Journal of Electromagnetic Waves and Applications
IS - 17-18
ER -