Defect structure of highly Zn-doped LiNb O3 single crystal revealed by extended x-ray absorption spectra

P. C. Tsai, M. L. Sun, Chi-Ta Chia, H. F. Lu, S. H. Lin, M. L. Hu, J. F. Lee

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

摘要

To determine the defect structure of ZnO-doped LiNb O3 single crystals with high doping concentrations, we obtain the measurements using the extended x-ray absorption fine structure (EXAFS) at room temperature. It indicates Zn atom is directly substituted on the Li site of the LiNb O3 crystal after Zn doping. EXAFS simulation by way of analyzing the scattering amplitudes also shows that the Zn atom does not substitute the Nb site at highly Zn-doped LiNb O3. Finally, we confirm that VNb 5-, a strong charged vacancy, should be considered as an important factors in influencing the physical properties of LiNb O3 beyond 7.5 mol % Zn-doped doping concentration.

原文英語
文章編號161902
期刊Applied Physics Letters
92
發行號16
DOIs
出版狀態已發佈 - 2008 五月 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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