Defect-engineered room temperature negative differential resistance in monolayer MoS2 transistors

Wen Hao Chang, Chun I. Lu, Tilo H. Yang, Shu Ting Yang, Kristan Bryan Simbulan, Chih Pin Lin, Shang Hsien Hsieh, Jyun Hong Chen, Kai Shin Li, Chia Hao Chen, Tuo Hung Hou, Ting Hua Lu, Yann Wen Lan*


研究成果: 雜誌貢獻期刊論文同行評審


The negative differential resistance (NDR) effect has been widely investigated for the development of various electronic devices. Apart from traditional semiconductor-based devices, two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) have also recently exhibited NDR behavior in several of their heterostructures. However, to observe NDR in the form of monolayer MoS2, theoretical prediction has revealed that the material should be more profoundly affected by sulfur (S) vacancy defects. In this work, monolayer MoS2 FETs with a specific amount of S-vacancy defects are fabricated using three approaches, namely chemical treatment (KOH solution), physical treatment (electron beam bombardment), and as-grown MoS2. Based on systematic studies on the correlation of the S-vacancies with both the device's electron transport characteristics and spectroscopic analysis, the NDR has been clearly observed in the defect-engineered monolayer MoS2 FETs with an S-vacancy (VS) amount of ∼5 ± 0.5%. Consequently, stable NDR behavior can be observed at room temperature, and its peak-to-valley ratio can also be effectively modulated via the gate electric field and light intensity. Through these results, it is envisioned that more electronic applications based on defect-engineered layered TMDs will emerge in the near future.

期刊Nanoscale Horizons
出版狀態已發佈 - 2022 10月 18

ASJC Scopus subject areas

  • 材料科學(全部)


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