Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

Y. T. Tang, T. M. Wu, C. L. Fan, Y. M. Lai, K. Y. Hsiang, C. Y. Liao, S. H. Chang, T. Y. Yu, P. Su, M. T. Chang, B. H. Huang, C. Hu, S. J. Chang, M. F. Chang, M. H. Lee

研究成果: 書貢獻/報告類型會議論文篇章

摘要

To address the strategy of interface effects to achieve low-voltage operation in ferroelectric devices, this work presents a systematical study on Hf0.5Zr0.5O2 ferroelectric(FE) capacitors. Firstly, by detail electrical characterization of P-V curves under varied electrodes and ambient gas, two factors governed ferroelectric switching can be well distinguished. Then by combining the kinetical pulse measurements and first-principle calculation, it is found that, 1) the intrinsic dead-layer effect exits in nanocapacitors; 2) the ferroelectric domain switching speed and coherency can be boosted via lower thermal budget O2 treatment. Finally, a material with coherency and ultra-low access voltage as design guideline for sub-3nm technology eNVM is provided.

原文英語
主出版物標題2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665433914
DOIs
出版狀態已發佈 - 2021 8月 25
對外發佈
事件2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, 臺灣
持續時間: 2021 8月 252021 8月 27

出版系列

名字2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

會議

會議2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
國家/地區臺灣
城市Hualien
期間2021/08/252021/08/27

ASJC Scopus subject areas

  • 電腦網路與通信
  • 電氣與電子工程
  • 儀器

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