摘要
A DC-20-GHz broadband and compact single-pole-quadruple-throw (SPQT) switch for Butler matrix switched beam smart antenna system application has been designed and fabricated on 0.15-μm GaAs pHEMT process. By adopting inductive high impedance transmission lines in series-shunt switch topology, the SPQT switch demonstrates an insertion loss of 1.25-3.53 dB from DC to 20 GHz, and the isolation is higher than 22 dB with a compact chip size of 1.5 mm 2. The measured output 1 dB compression point (OP 1 dB) is 16 dBm at 12 GHz.
原文 | 英語 |
---|---|
頁(從 - 到) | 2023-2026 |
頁數 | 4 |
期刊 | Microwave and Optical Technology Letters |
卷 | 54 |
發行號 | 9 |
DOIs | |
出版狀態 | 已發佈 - 2012 9月 |
ASJC Scopus subject areas
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 電氣與電子工程