Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence

J. T. Hsieh*, J. M. Hwang, H. L. Hwang, W. H. Hung

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

原文英語
頁(從 - 到)6d
期刊MRS Internet Journal of Nitride Semiconductor Research
4
發行號SUPPL. 1
DOIs
出版狀態已發佈 - 1999

ASJC Scopus subject areas

  • 材料科學(全部)

指紋

深入研究「Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence」主題。共同形成了獨特的指紋。

引用此