Current uniformity improvement in flexible resistive memory

Zhi Wei Zheng, Chun Hu Cheng, Kun I. Chou, Ming Liu, Albert Chin

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

High uniform current distribution, good endurance, and low 28 μW switching power are successfully achieved in Ni/GeOx/TiO y/TaN resistive random access memory devices on flexible polyimide substrate. The good performances are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. The present results demonstrate that the device with nitrogen-rich TaN electrode has a strong potential for future low-cost high-performance flexible memory application.

原文英語
主出版物標題2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
出版狀態已發佈 - 2013
事件2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, 香港
持續時間: 2013 六月 32013 六月 5

出版系列

名字2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

其他

其他2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
國家/地區香港
城市Hong Kong
期間2013/06/032013/06/05

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程

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