Current enhancement of green transistors compared with conventional tunnel field-effect transistors

Min Hung Lee, Jhe Cyun Lin, Cheng Ying Kao, Chih Wei Chen

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

摘要

P-type tunneling-based high-driving-current green field-effect transistors (p-gFETs) with dopant segregation (DS) on bulk Si were successfully fabricated and developed. gFETs with the vertical band-to-band tunneling (BTBT) mechanism have a valid benefit for 25 ON current enhancement compared with tunneling field-effect transistors (TFETs) without sacrificing leakage current and subthreshold swing for CMOS scaling in future-generation transistors. Ni DS enhanced the amount of n dopant in the source/drain region and produced a steep junction profile, which improved the BTBT mechanism. The promising gFET with silicon-on-insulator-free (SOI-free) gFET can be compatible with current processes and solve the issues of cost and thermal dissipation.

原文英語
文章編號04CC27
期刊Japanese Journal of Applied Physics
52
發行號4 PART 2
DOIs
出版狀態已發佈 - 2013 四月 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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