Current enhancement of green transistors compared with conventional tunnel field-effect transistors

Min Hung Lee, Jhe Cyun Lin, Cheng Ying Kao, Chih Wei Chen

    研究成果: 雜誌貢獻期刊論文同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    P-type tunneling-based high-driving-current green field-effect transistors (p-gFETs) with dopant segregation (DS) on bulk Si were successfully fabricated and developed. gFETs with the vertical band-to-band tunneling (BTBT) mechanism have a valid benefit for 25 ON current enhancement compared with tunneling field-effect transistors (TFETs) without sacrificing leakage current and subthreshold swing for CMOS scaling in future-generation transistors. Ni DS enhanced the amount of n dopant in the source/drain region and produced a steep junction profile, which improved the BTBT mechanism. The promising gFET with silicon-on-insulator-free (SOI-free) gFET can be compatible with current processes and solve the issues of cost and thermal dissipation.

    原文英語
    文章編號04CC27
    期刊Japanese Journal of Applied Physics
    52
    發行號4 PART 2
    DOIs
    出版狀態已發佈 - 2013 四月 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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