Current enhancement of green transistors compared with conventional tunnel field-effect transistors

Min Hung Lee, Jhe Cyun Lin, Cheng Ying Kao, Chih Wei Chen

研究成果: 雜誌貢獻文章

3 引文 (Scopus)

摘要

P-type tunneling-based high-driving-current green field-effect transistors (p-gFETs) with dopant segregation (DS) on bulk Si were successfully fabricated and developed. gFETs with the vertical band-to-band tunneling (BTBT) mechanism have a valid benefit for 25 ON current enhancement compared with tunneling field-effect transistors (TFETs) without sacrificing leakage current and subthreshold swing for CMOS scaling in future-generation transistors. Ni DS enhanced the amount of n dopant in the source/drain region and produced a steep junction profile, which improved the BTBT mechanism. The promising gFET with silicon-on-insulator-free (SOI-free) gFET can be compatible with current processes and solve the issues of cost and thermal dissipation.

原文英語
文章編號04CC27
期刊Japanese Journal of Applied Physics
52
發行號4 PART 2
DOIs
出版狀態已發佈 - 2013 四月 1

指紋

Field effect transistors
tunnels
Tunnels
Transistors
transistors
field effect transistors
Doping (additives)
augmentation
Leakage currents
high current
Silicon
CMOS
leakage
dissipation
insulators
costs
scaling
Costs
silicon
profiles

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

Current enhancement of green transistors compared with conventional tunnel field-effect transistors. / Lee, Min Hung; Lin, Jhe Cyun; Kao, Cheng Ying; Chen, Chih Wei.

於: Japanese Journal of Applied Physics, 卷 52, 編號 4 PART 2, 04CC27, 01.04.2013.

研究成果: 雜誌貢獻文章

@article{3c70d7e41005474e92bb07f96e5a25e8,
title = "Current enhancement of green transistors compared with conventional tunnel field-effect transistors",
abstract = "P-type tunneling-based high-driving-current green field-effect transistors (p-gFETs) with dopant segregation (DS) on bulk Si were successfully fabricated and developed. gFETs with the vertical band-to-band tunneling (BTBT) mechanism have a valid benefit for 25 ON current enhancement compared with tunneling field-effect transistors (TFETs) without sacrificing leakage current and subthreshold swing for CMOS scaling in future-generation transistors. Ni DS enhanced the amount of n dopant in the source/drain region and produced a steep junction profile, which improved the BTBT mechanism. The promising gFET with silicon-on-insulator-free (SOI-free) gFET can be compatible with current processes and solve the issues of cost and thermal dissipation.",
author = "Lee, {Min Hung} and Lin, {Jhe Cyun} and Kao, {Cheng Ying} and Chen, {Chih Wei}",
year = "2013",
month = "4",
day = "1",
doi = "10.7567/JJAP.52.04CC27",
language = "English",
volume = "52",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 PART 2",

}

TY - JOUR

T1 - Current enhancement of green transistors compared with conventional tunnel field-effect transistors

AU - Lee, Min Hung

AU - Lin, Jhe Cyun

AU - Kao, Cheng Ying

AU - Chen, Chih Wei

PY - 2013/4/1

Y1 - 2013/4/1

N2 - P-type tunneling-based high-driving-current green field-effect transistors (p-gFETs) with dopant segregation (DS) on bulk Si were successfully fabricated and developed. gFETs with the vertical band-to-band tunneling (BTBT) mechanism have a valid benefit for 25 ON current enhancement compared with tunneling field-effect transistors (TFETs) without sacrificing leakage current and subthreshold swing for CMOS scaling in future-generation transistors. Ni DS enhanced the amount of n dopant in the source/drain region and produced a steep junction profile, which improved the BTBT mechanism. The promising gFET with silicon-on-insulator-free (SOI-free) gFET can be compatible with current processes and solve the issues of cost and thermal dissipation.

AB - P-type tunneling-based high-driving-current green field-effect transistors (p-gFETs) with dopant segregation (DS) on bulk Si were successfully fabricated and developed. gFETs with the vertical band-to-band tunneling (BTBT) mechanism have a valid benefit for 25 ON current enhancement compared with tunneling field-effect transistors (TFETs) without sacrificing leakage current and subthreshold swing for CMOS scaling in future-generation transistors. Ni DS enhanced the amount of n dopant in the source/drain region and produced a steep junction profile, which improved the BTBT mechanism. The promising gFET with silicon-on-insulator-free (SOI-free) gFET can be compatible with current processes and solve the issues of cost and thermal dissipation.

UR - http://www.scopus.com/inward/record.url?scp=84880845809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880845809&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.04CC27

DO - 10.7567/JJAP.52.04CC27

M3 - Article

AN - SCOPUS:84880845809

VL - 52

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 PART 2

M1 - 04CC27

ER -