Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Chuan Hsi Liu, Hung Wen Chen, Shung Yuan Chen, Heng Sheng Huang, Li Wei Cheng

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34 引文 斯高帕斯(Scopus)

摘要

Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO2 stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (Jg) is as low as 6.8× 10-2 A/ cm2. Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (ΦB) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φt) is about 0.51 eV.

原文英語
文章編號012103
期刊Applied Physics Letters
95
發行號1
DOIs
出版狀態已發佈 - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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