@inproceedings{14d6cfc0cb3c4304926d3d09374a30fb,
title = "Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films",
abstract = "Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposited (ALD) LaO/HfZrO stacked gate dielectrics were fabricated. The experimental results reveal that the equivalent oxide thickness (EOT) is 0.65 nm, and the gate leakage current density (Jg) is only 1.9 A/cm2. The main current conduction mechanisms are Schottky emission, Poole-Frankel emission, and Fowler-Nordheim tunneling. The barrier height (ΦB) is estimated to be about 1.07 eV at TaC and HfZrLaO interface.",
keywords = "HfZrLaO, carrier transportation, conduction mechanism, high-K, metal gate",
author = "Chen, {H. W.} and Hsu, {H. W.} and Chen, {S. Y.} and Huang, {H. S.} and Wang, {M. C.} and Liu, {C. H.}",
year = "2011",
doi = "10.1109/INEC.2011.5991686",
language = "English",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}