Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

H. W. Chen*, H. W. Hsu, S. Y. Chen, H. S. Huang, M. C. Wang, C. H. Liu

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposited (ALD) LaO/HfZrO stacked gate dielectrics were fabricated. The experimental results reveal that the equivalent oxide thickness (EOT) is 0.65 nm, and the gate leakage current density (Jg) is only 1.9 A/cm2. The main current conduction mechanisms are Schottky emission, Poole-Frankel emission, and Fowler-Nordheim tunneling. The barrier height (ΦB) is estimated to be about 1.07 eV at TaC and HfZrLaO interface.

原文英語
主出版物標題4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
出版狀態已發佈 - 2011 九月 26
事件4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣
持續時間: 2011 六月 212011 六月 24

出版系列

名字Proceedings - International NanoElectronics Conference, INEC
ISSN(列印)2159-3523

其他

其他4th IEEE International Nanoelectronics Conference, INEC 2011
國家/地區臺灣
城市Tao-Yuan
期間2011/06/212011/06/24

ASJC Scopus subject areas

  • 電氣與電子工程

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