Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE

Li Wei Sung, Hao Hsiung Lin, Chih Ta Chia

研究成果: 雜誌貢獻文章

12 引文 斯高帕斯(Scopus)

摘要

Cubic GaN films have been grown on (0 0 1) GaAs substrates by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga-flux to N-flux ratios that were determined by deposition rates directly. Three growth regimes are defined in the cubic GaN growth diagram. The optical quality of these films was measured by photoluminescence (PL). Micro-Raman scattering was performed to analyze the crystallization of the films. The optimal flux ratio for cubic GaN grown at Ts = 720°C is on the boundary between intermediate Ga stable regime and Ga droplet regime.

原文英語
頁(從 - 到)320-324
頁數5
期刊Journal of Crystal Growth
241
發行號3
DOIs
出版狀態已發佈 - 2002 六月 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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