TY - GEN
T1 - Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording
AU - Ou, S. L.
AU - Kuo, P. C.
AU - Tsai, T. L.
AU - Shen, C. L.
AU - Cheng, C. P.
AU - Yeh, C. Y.
AU - Chang, H. F.
AU - Lee, C. T.
AU - Chiang, D.
PY - 2011
Y1 - 2011
N2 - GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ∼ 165°C and 310°C∼ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.
AB - GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ∼ 165°C and 310°C∼ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.
KW - GeCu/Si bilayer
KW - write-once blue laser optical recording
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UR - http://www.scopus.com/inward/citedby.url?scp=80052987112&partnerID=8YFLogxK
U2 - 10.1109/INEC.2011.5991749
DO - 10.1109/INEC.2011.5991749
M3 - Conference contribution
AN - SCOPUS:80052987112
SN - 9781457703799
T3 - Proceedings - International NanoElectronics Conference, INEC
BT - 4th IEEE International NanoElectronics Conference, INEC 2011
T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011
Y2 - 21 June 2011 through 24 June 2011
ER -