Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording

S. L. Ou, P. C. Kuo, T. L. Tsai, C. L. Shen, C. P. Cheng, C. Y. Yeh, H. F. Chang, C. T. Lee, D. Chiang

研究成果: 書貢獻/報告類型會議貢獻

摘要

GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ∼ 165°C and 310°C∼ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.

原文英語
主出版物標題4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
出版狀態已發佈 - 2011 九月 26
事件4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣
持續時間: 2011 六月 212011 六月 24

出版系列

名字Proceedings - International NanoElectronics Conference, INEC
ISSN(列印)2159-3523

其他

其他4th IEEE International Nanoelectronics Conference, INEC 2011
國家臺灣
城市Tao-Yuan
期間11/6/2111/6/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ou, S. L., Kuo, P. C., Tsai, T. L., Shen, C. L., Cheng, C. P., Yeh, C. Y., Chang, H. F., Lee, C. T., & Chiang, D. (2011). Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording. 於 4th IEEE International NanoElectronics Conference, INEC 2011 [5991749] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991749