Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf_1-xZr_XO_2 for Quantum Computing Applications

K. Y. Hsiang, J. Y. Lee, Z. F. Lou, F. S. Chang, Z. X. Li, C. W. Liu, T. H. Hou, P. Su, M. H. Lee*

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE) Hf_1-xZr_xO_2 capacitors is investigated for ∼ 1010 cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with 80% normalized switching 2P_r,sw for t_p= 1μs compared to 60% for the FE capacitor at 80 K.

原文英語
主出版物標題2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665456722
DOIs
出版狀態已發佈 - 2023
事件61st IEEE International Reliability Physics Symposium, IRPS 2023 - Monterey, 美国
持續時間: 2023 3月 262023 3月 30

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2023-March
ISSN(列印)1541-7026

會議

會議61st IEEE International Reliability Physics Symposium, IRPS 2023
國家/地區美国
城市Monterey
期間2023/03/262023/03/30

ASJC Scopus subject areas

  • 一般工程

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