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Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors
Yue Min Wan
*
, Kuo Dong Huang,
S. F. Hu
, C. L. Sung, Y. C. Chou
*
此作品的通信作者
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
8
引文 斯高帕斯(Scopus)
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深入研究「Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors」主題。共同形成了獨特的指紋。
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oscillations
100%
silicon oxides
100%
electrons
100%
transistors
100%
energy
25%
power
25%
devices
25%
size
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cost
25%
temperature range 0273-0400 k
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quantum dots
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voltage
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oxides
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tunneling
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thickness
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periodicity
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junctions
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excited states
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nanoelectronics
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energy levels
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point contacts
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Chemistry
Electron Particle
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Coulomb Blockade
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Silicon Oxide
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Oscillation
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Ambient Reaction Temperature
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Particle Size
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Quantum Dot
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Thickness
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Voltage
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Energy
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Tunneling
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Oxide
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Excited State
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Electron Energy Level
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Physics
Oscillation
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Electrons
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Room Temperature
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Quantum Dot
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Oxide
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Electric Potential
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Excitation
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Energy Levels
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Electron Tunneling
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Material Science
Oxide
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Transistor
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Silicon
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Temperature
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Devices
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Nanoelectronics
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Chemical Engineering
Quantum Dot
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Temperature
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Oxide
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Single Electron Transistor
100%
Engineering
Electron Charging Effect
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Electron Charging Energy
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