Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

Yue Min Wan; Kuo Dong Huang; S. F. Hu; C. L. Sung; Y. C. Chou

doi:10.1063/1.1921335

Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

Yue Min Wan^*
, Kuo Dong Huang
, S. F. Hu
, C. L. Sung
, Y. C. Chou

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.

原文	英語
文章編號	116106
期刊	Journal of Applied Physics
卷	97
發行號	11
DOIs	https://doi.org/10.1063/1.1921335
出版狀態	已發佈 - 2005
對外發佈	是

ASJC Scopus subject areas

一般物理與天文學

存取文件

10.1063/1.1921335

其它文件與鏈接

引用此

@article{25b8ce8eaa344779a73efd28ad950107,

title = "Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors",

abstract = "Ultrathin oxide-gated (thickness \textasciitilde{}6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size \textasciitilde{}8 nm, and also suggests electron tunneling is via the first excited state. These low-power \textasciitilde{}30 pW and low-cost devices can be useful for the next generation nanoelectronics.",

author = "Wan, \{Yue Min\} and Huang, \{Kuo Dong\} and Hu, \{S. F.\} and Sung, \{C. L.\} and Chou, \{Y. C.\}",

note = "Funding Information: The authors are gratefully indebted to the research staff in the National Nano Device Laboratories (NDL) for providing much experimental assistance and also to Professor G. W. Shuy for many stimulating discussions. This work was financially supported by the National Science Council of the Republic of China under Contract Nos. NSC91-2112-M-214-001, NSC92-2215-E-492-008, ISU92–1C-07, and ISU93-01-06. ",

year = "2005",

doi = "10.1063/1.1921335",

language = "English",

volume = "97",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Inc.",

number = "11",

}

TY - JOUR

T1 - Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

AU - Wan, Yue Min

AU - Huang, Kuo Dong

AU - Hu, S. F.

AU - Sung, C. L.

AU - Chou, Y. C.

N1 - Funding Information: The authors are gratefully indebted to the research staff in the National Nano Device Laboratories (NDL) for providing much experimental assistance and also to Professor G. W. Shuy for many stimulating discussions. This work was financially supported by the National Science Council of the Republic of China under Contract Nos. NSC91-2112-M-214-001, NSC92-2215-E-492-008, ISU92–1C-07, and ISU93-01-06.

PY - 2005

Y1 - 2005

N2 - Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.

AB - Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.

UR - https://www.scopus.com/pages/publications/20544466930

UR - https://www.scopus.com/pages/publications/20544466930#tab=citedBy

U2 - 10.1063/1.1921335

DO - 10.1063/1.1921335

M3 - Article

AN - SCOPUS:20544466930

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 116106

ER -

Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此