@article{25b8ce8eaa344779a73efd28ad950107,
title = "Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors",
abstract = "Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.",
author = "Wan, {Yue Min} and Huang, {Kuo Dong} and Hu, {S. F.} and Sung, {C. L.} and Chou, {Y. C.}",
note = "Funding Information: The authors are gratefully indebted to the research staff in the National Nano Device Laboratories (NDL) for providing much experimental assistance and also to Professor G. W. Shuy for many stimulating discussions. This work was financially supported by the National Science Council of the Republic of China under Contract Nos. NSC91-2112-M-214-001, NSC92-2215-E-492-008, ISU92–1C-07, and ISU93-01-06. ",
year = "2005",
doi = "10.1063/1.1921335",
language = "English",
volume = "97",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}