Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

Hsiao Hsuan Hsu, Shiang Shiou Yen, Yu Chien Chiu, Ping Chiou, Chun Yen Chang, Chun Hu Cheng*, Yu Chien Lai, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

A low off-state current of 1.6 × 10-14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary.

原文英語
頁(從 - 到)S187-S192
期刊Journal of Alloys and Compounds
643
發行號S1
DOIs
出版狀態已發佈 - 2015 六月 14

ASJC Scopus subject areas

  • 材料力學
  • 機械工業
  • 金屬和合金
  • 材料化學

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