Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

Hsiao Hsuan Hsu, Shiang Shiou Yen, Yu Chien Chiu, Ping Chiou, Chun Yen Chang, Chun Hu Cheng, Yu Chien Lai, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

摘要

A low off-state current of 1.6 × 10-14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary.

原文英語
頁(從 - 到)S187-S192
期刊Journal of Alloys and Compounds
643
發行號S1
DOIs
出版狀態已發佈 - 2015 六月 14

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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    Hsu, H. H., Yen, S. S., Chiu, Y. C., Chiou, P., Chang, C. Y., Cheng, C. H., Lai, Y. C., Chang, C. P., Lu, H. H., Chuang, C. S., & Lin, Y. H. (2015). Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors. Journal of Alloys and Compounds, 643(S1), S187-S192. https://doi.org/10.1016/j.jallcom.2014.12.207