Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes

C. H. Lin*, M. H. Lee, C. W. Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

Metal-oxide-silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si-D bond bending mode and the transverse optical phonon of bulk silicon.

原文英語
頁(從 - 到)637-639
頁數3
期刊Applied Physics Letters
78
發行號5
DOIs
出版狀態已發佈 - 2001 1月 29
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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