Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes

C. H. Lin, Min-Hung Lee, C. W. Liu

    研究成果: 雜誌貢獻文章同行評審

    10 引文 斯高帕斯(Scopus)

    摘要

    Metal-oxide-silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si-D bond bending mode and the transverse optical phonon of bulk silicon.

    原文英語
    頁(從 - 到)637-639
    頁數3
    期刊Applied Physics Letters
    78
    發行號5
    DOIs
    出版狀態已發佈 - 2001 一月 29

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    指紋 深入研究「Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes」主題。共同形成了獨特的指紋。

    引用此