Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7

W. B. Su*, H. Y. Lin, Y. P. Chiu, H. T. Shih, T. Y. Fu, Y. W. Chen, C. S. Chang, Tien T. Tsong

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

20 引文 斯高帕斯(Scopus)

摘要

It is known that a quantum size effect can induce a morphological transition of Pb nanostructure, from three-dimensional clusters to multilayer two-dimensional islands, grown on the Si(111)7 X 7 at low temperature. We use scanning tunneling microscopy to in situ observe the formation of an individual island to figure out the transition process. Our results reveal that every island differing in thickness can be correlated with a unique transition pathway. A similar behavior is also observed in the growth of flat Ag islands on the Si(111) 7 X 7 substrate at room temperature.

原文英語
文章編號073304
期刊Physical Review B - Condensed Matter and Materials Physics
71
發行號7
DOIs
出版狀態已發佈 - 2005 2月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學

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