Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7

W. B. Su, H. Y. Lin, Ya-Ping Chiu, H. T. Shih, Tsu-Yi Fu, Y. W. Chen, C. S. Chang, Tien T. Tsong

研究成果: 雜誌貢獻文章

18 引文 (Scopus)

摘要

It is known that a quantum size effect can induce a morphological transition of Pb nanostructure, from three-dimensional clusters to multilayer two-dimensional islands, grown on the Si(111)7 X 7 at low temperature. We use scanning tunneling microscopy to in situ observe the formation of an individual island to figure out the transition process. Our results reveal that every island differing in thickness can be correlated with a unique transition pathway. A similar behavior is also observed in the growth of flat Ag islands on the Si(111) 7 X 7 substrate at room temperature.

原文英語
文章編號073304
期刊Physical Review B - Condensed Matter and Materials Physics
71
發行號7
DOIs
出版狀態已發佈 - 2005 二月 1

指紋

Scanning tunneling microscopy
Nanostructures
Multilayers
Temperature
Substrates
scanning tunneling microscopy
room temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

引用此文

Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7. / Su, W. B.; Lin, H. Y.; Chiu, Ya-Ping; Shih, H. T.; Fu, Tsu-Yi; Chen, Y. W.; Chang, C. S.; Tsong, Tien T.

於: Physical Review B - Condensed Matter and Materials Physics, 卷 71, 編號 7, 073304, 01.02.2005.

研究成果: 雜誌貢獻文章

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AU - Su, W. B.

AU - Lin, H. Y.

AU - Chiu, Ya-Ping

AU - Shih, H. T.

AU - Fu, Tsu-Yi

AU - Chen, Y. W.

AU - Chang, C. S.

AU - Tsong, Tien T.

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