Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs

M. H. Lee*, C. W. Tai, J. J. Huang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage (VT), subthreshold swing (SS), and mobility (μ) of carriers. The hydrogenated nanocrystalline (nc-Si:H) thin-film transistors (TFTs) were demonstrated with high electrical reliability for hot carrier (HC) stress and positive bias temperature instability (PBTI) stress and can be explained by trap state distribution of the bandgap. The weak or broken bonds may contribute to the redistribution of trap states and lead to unstable electrical characteristics of the hydrogenated amorphous Si (a-Si:H) TFTs. We conclude that the gap state density of a nc-Si:H layer with stress is the fundamental reliability issue for the development of flexible electronics.

原文英語
頁(從 - 到)72-75
頁數4
期刊Solid-State Electronics
80
DOIs
出版狀態已發佈 - 2013

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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