@article{249c158787d640128ac1612f4d79f4ca,
title = "Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films",
abstract = "The ferroelectric characteristics of undoped hafnium oxide (HfO2) in titanium nitride (TiN)/HfO2/TiN stacks exhibited improved remanent polarization by controlling the nitrogen gas flow during TiN deposition in this work. Electrical measurements revealed that samples with a higher N2/(Ar + N2) ratio obtained a higher remanent polarization of approximately 10 μC/cm2 at 2.5 V but exhibited a larger leakage current and less reliability. Among all the samples, the sample with a N2/(Ar + N2) ratio of 33% exhibited a relatively high remanent polarization of 12 μC/cm2 and excellent endurance over 108 cycles. Through X-ray photoelectron spectroscopy (XPS) analysis, it was observed that increasing the N2 gas flow during TiN electrode deposition contributed to excessive N-diffusion, leading to the creation of more oxygen vacancies and subsequently to device failure. Therefore, controlling the appropriate N2 gas flow during TiN deposition is crucial to enhance the ferroelectric characteristics of undoped HfO2. The results of this study may be applicable to future work on nonvolatile memory applications.",
keywords = "Endurance test, Ferroelectric, Hafnium oxide, Remanent polarization, Titanium nitride",
author = "Luo, {Jun Dao} and Yeh, {Yun Tien} and Lai, {Yu Ying} and Wu, {Chia Feng} and Chung, {Hao Tung} and Li, {Yi Shao} and Chuang, {Kai Chi} and Li, {Wei Shuo} and Chen, {Pin Guang} and Lee, {Min Hung} and Cheng, {Huang Chung}",
note = "Funding Information: The authors would like to thank the Nano Facility Center of the National Chiao Tung University and the Taiwan Semiconductor Research Institute (TSRI) for providing relevant processing equipment. This project was financially supported by Ministry of Science and Technology, Taiwan ( MOST 107-2221-E-009-091-MY2 , 108-2218-E-003-003 , and 108-2622-8-002-016 ). Funding Information: The authors would like to thank the Nano Facility Center of the National Chiao Tung University and the Taiwan Semiconductor Research Institute (TSRI) for providing relevant processing equipment. This project was financially supported by Ministry of Science and Technology, Taiwan (MOST 107-2221-E-009-091-MY2, 108-2218-E-003-003, and 108-2622-8-002-016). Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",
year = "2020",
month = jun,
doi = "10.1016/j.vacuum.2020.109317",
language = "English",
volume = "176",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
}