Correlated electric fluctuations in GaN nanowire devices

L. C. Li; S. Y. Huang; J. A. Wei; Y. W. Suen; M. W. Lee; W. H. Hsieh; T. W. Liu; C. C. Chen

doi:10.1166/jnn.2009.C072

Correlated electric fluctuations in GaN nanowire devices

L. C. Li, S. Y. Huang, J. A. Wei, Y. W. Suen, M. W. Lee, W. H. Hsieh, T. W. Liu, C. C. Chen

化學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

原文	英語
頁（從 - 到）	1000-1003
頁數	4
期刊	Journal of Nanoscience and Nanotechnology
卷	9
發行號	2
DOIs	https://doi.org/10.1166/jnn.2009.C072
出版狀態	已發佈 - 2009 2月

ASJC Scopus subject areas

生物工程
一般化學
生物醫學工程
一般材料科學
凝聚態物理學

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10.1166/jnn.2009.C072

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title = "Correlated electric fluctuations in GaN nanowire devices",

abstract = "We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.",

keywords = "Correlation, Cross spectrum, Electric fluctuation, GaN nanowire, Low-frequency excess noise, Noise",

author = "Li, {L. C.} and Huang, {S. Y.} and Wei, {J. A.} and Suen, {Y. W.} and Lee, {M. W.} and Hsieh, {W. H.} and Liu, {T. W.} and Chen, {C. C.}",

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month = feb,

doi = "10.1166/jnn.2009.C072",

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TY - JOUR

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AU - Li, L. C.

AU - Huang, S. Y.

AU - Wei, J. A.

AU - Suen, Y. W.

AU - Lee, M. W.

AU - Hsieh, W. H.

AU - Liu, T. W.

AU - Chen, C. C.

PY - 2009/2

Y1 - 2009/2

N2 - We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

AB - We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

KW - Correlation

KW - Cross spectrum

KW - Electric fluctuation

KW - GaN nanowire

KW - Low-frequency excess noise

KW - Noise

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M3 - Article

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

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Correlated electric fluctuations in GaN nanowire devices

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