Correlated electric fluctuations in GaN nanowire devices

L. C. Li, S. Y. Huang, J. A. Wei, Y. W. Suen, M. W. Lee, W. H. Hsieh, T. W. Liu, C. C. Chen

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

原文英語
頁(從 - 到)1000-1003
頁數4
期刊Journal of Nanoscience and Nanotechnology
9
發行號2
DOIs
出版狀態已發佈 - 2009 2月

ASJC Scopus subject areas

  • 生物工程
  • 化學 (全部)
  • 生物醫學工程
  • 材料科學(全部)
  • 凝聚態物理學

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