Controllable quantum interference in amorphous in GaZn04 thin-film transistors

Wei Hsiang Wang; Syue Ru Lyu; Elica Heredia; Shu Hao Liu; Pei Hsun Jiang; Po Yung Liao; Ting Chang Chang; Hua Mao Chen

Controllable quantum interference in amorphous in GaZn04 thin-film transistors

Wei Hsiang Wang
, Syue Ru Lyu
, Elica Heredia
, Shu Hao Liu
, Pei Hsun Jiang
, Po Yung Liao
, Ting Chang Chang
, Hua Mao Chen

物理學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.

原文	英語
主出版物標題	24th International Display Workshops, IDW 2017
發行者	International Display Workshops
頁面	308-311
頁數	4
ISBN（電子）	9781510858992
出版狀態	已發佈 - 2017
事件	24th International Display Workshops, IDW 2017 - Sendai, 日本持續時間: 2017 12月 6 → 2017 12月 8

出版系列

名字	Proceedings of the International Display Workshops
卷	1
ISSN（列印）	1883-2490

會議

會議	24th International Display Workshops, IDW 2017
國家/地區	日本
城市	Sendai
期間	2017/12/06 → 2017/12/08

UN SDG

此研究成果有助於以下永續發展目標

SDG 3 健康與福祉

ASJC Scopus subject areas

電腦視覺和模式識別
人機介面
電氣與電子工程
電子、光磁材料
放射學、核子醫學和影像學

其它文件與鏈接

引用此

Wang, WH, Lyu, SR, Heredia, E, Liu, SH, Jiang, PH, Liao, PY, Chang, TC & Chen, HM 2017, Controllable quantum interference in amorphous in GaZn04 thin-film transistors. 於 24th International Display Workshops, IDW 2017. Proceedings of the International Display Workshops, 卷 1, International Display Workshops, 頁 308-311, 24th International Display Workshops, IDW 2017, Sendai, 日本, 2017/12/06.

@inproceedings{e97e025552694b80ad57ebfcadae8ccd,

title = "Controllable quantum interference in amorphous in GaZn04 thin-film transistors",

abstract = "We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.",

keywords = "IGZO, Quantum interference, TFT, Weak antilocalization, Weak localization",

author = "Wang, \{Wei Hsiang\} and Lyu, \{Syue Ru\} and Elica Heredia and Liu, \{Shu Hao\} and Jiang, \{Pei Hsun\} and Liao, \{Po Yung\} and Chang, \{Ting Chang\} and Chen, \{Hua Mao\}",

note = "Publisher Copyright: {\textcopyright} 2017 Proceedings of the International Display Workshops. All rights reserved.; 24th International Display Workshops, IDW 2017 ; Conference date: 06-12-2017 Through 08-12-2017",

year = "2017",

language = "English",

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publisher = "International Display Workshops",

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T1 - Controllable quantum interference in amorphous in GaZn04 thin-film transistors

AU - Wang, Wei Hsiang

AU - Lyu, Syue Ru

AU - Heredia, Elica

AU - Liu, Shu Hao

AU - Jiang, Pei Hsun

AU - Liao, Po Yung

AU - Chang, Ting Chang

AU - Chen, Hua Mao

PY - 2017

Y1 - 2017

N2 - We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.

AB - We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.

KW - IGZO

KW - Quantum interference

KW - TFT

KW - Weak antilocalization

KW - Weak localization

UR - https://www.scopus.com/pages/publications/85056274701

UR - https://www.scopus.com/pages/publications/85056274701#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:85056274701

T3 - Proceedings of the International Display Workshops

SP - 308

EP - 311

BT - 24th International Display Workshops, IDW 2017

PB - International Display Workshops

T2 - 24th International Display Workshops, IDW 2017

Y2 - 6 December 2017 through 8 December 2017

ER -

Controllable quantum interference in amorphous in GaZn04 thin-film transistors

摘要

出版系列

會議

UN SDG

ASJC Scopus subject areas

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