Comprehensively study on a ballistic-injection AND-type flash memory cell

Meng Yi Wu; Sheng Huei Dai; Shu Fen Hu; Evans Ching Sung Yang; Charles Ching Hsiang Hsu; Ya Chin King

doi:10.1143/JJAP.45.674

Comprehensively study on a ballistic-injection AND-type flash memory cell

Meng Yi Wu^*, Sheng Huei Dai, Shu Fen Hu, Evans Ching Sung Yang, Charles Ching Hsiang Hsu, Ya Chin King

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10^-3-10^-4 and small cell size of 5F². In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

原文	英語
頁（從 - 到）	674-679
頁數	6
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	45
發行號	2 A
DOIs	https://doi.org/10.1143/JJAP.45.674
出版狀態	已發佈 - 2006 2月 8
對外發佈	是

ASJC Scopus subject areas

一般工程
一般物理與天文學

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10.1143/JJAP.45.674

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引用此

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title = "Comprehensively study on a ballistic-injection AND-type flash memory cell",

abstract = "In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.",

keywords = "AND memory, Ballistic, Flash memory, Non-volNarkatile memory, Split gate flash",

author = "Wu, {Meng Yi} and Dai, {Sheng Huei} and Hu, {Shu Fen} and Yang, {Evans Ching Sung} and Hsu, {Charles Ching Hsiang} and King, {Ya Chin}",

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AU - Dai, Sheng Huei

AU - Hu, Shu Fen

AU - Yang, Evans Ching Sung

AU - Hsu, Charles Ching Hsiang

AU - King, Ya Chin

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N2 - In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

AB - In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

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KW - Ballistic

KW - Flash memory

KW - Non-volNarkatile memory

KW - Split gate flash

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Comprehensively study on a ballistic-injection AND-type flash memory cell

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