Due to the mobility enhancement of strained-Si channel, the strained-Si MOSFET has reportedly a great improvement on DC characteristics. The improvement on the cut-off frequency (fT) of strained-Si device is demonstrated in this work. The strained-Si device has the same flicker noise (1/f) as the control Si device as long as no threading dislocation exists in the channel and the thermal budget is properly controlled. The large density of defect in the relaxed SiGe buffer layers shows no effect on the flicker noise. The threading dislocation penetrating into the strained-Si channel and Ge outdiffusion can degrade the flicker noise of strained-Si NMOSFETs. A thicker strained-Si channel layer can reduce the roughness scattering from the underneath strained Si/relaxed SiGe heterojunction, and yields a higher mobility, higher fT, and lower noise figures, as compared to the thin strained-Si channel.
|頁（從 - 到）||69-72|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||已發佈 - 2003|
|事件||IEEE International Electron Devices Meeting - Washington, DC, 美国|
持續時間: 2003 12月 8 → 2003 12月 10
ASJC Scopus subject areas