Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs

M. H. Lee*, P. S. Chen, W. C. Hua, C. Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W. Y. Hsieh, M. J. Tsai

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

22 引文 斯高帕斯(Scopus)

摘要

Due to the mobility enhancement of strained-Si channel, the strained-Si MOSFET has reportedly a great improvement on DC characteristics. The improvement on the cut-off frequency (fT) of strained-Si device is demonstrated in this work. The strained-Si device has the same flicker noise (1/f) as the control Si device as long as no threading dislocation exists in the channel and the thermal budget is properly controlled. The large density of defect in the relaxed SiGe buffer layers shows no effect on the flicker noise. The threading dislocation penetrating into the strained-Si channel and Ge outdiffusion can degrade the flicker noise of strained-Si NMOSFETs. A thicker strained-Si channel layer can reduce the roughness scattering from the underneath strained Si/relaxed SiGe heterojunction, and yields a higher mobility, higher fT, and lower noise figures, as compared to the thin strained-Si channel.

原文英語
頁(從 - 到)69-72
頁數4
期刊Technical Digest - International Electron Devices Meeting
出版狀態已發佈 - 2003
對外發佈
事件IEEE International Electron Devices Meeting - Washington, DC, 美国
持續時間: 2003 12月 82003 12月 10

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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