### 摘要

In this work, complex photonic band structure (CPBS) in a semiconductor-dielectric photonic crystal (SDPC) operating at terahertz frequencies is theoretically investigated. The SDPC is air/(S/D)^{N} /air where the dielectric layer D is SiO_{2}, the semiconductor layer S is an intrinsic semiconductor InSb, and N is the number of periods. Using the experimental data for the strongly temperature- dependent plasma frequency and damping frequency for InSb, we calculate the CPBS for the infinite SDPC at distinct operating temperatures. The CPBS is then compared with the calculated transmittance, reflectance, and absorptance as well in the finite SDPC. Based on the calculated CPBS, the role played by the loss factor (damping frequency), in InSb is revealed. Additionally, from the calculated transmittance spectra, we further investigate the cutoff frequency for the SDPC. The dependences of cutoff frequency on the number of periods and the filling factor of semiconductor layer are numerically illustrated.

原文 | 英語 |
---|---|

頁（從 - 到） | 153-167 |

頁數 | 15 |

期刊 | Progress in Electromagnetics Research |

卷 | 131 |

DOIs | |

出版狀態 | 已發佈 - 2012 一月 1 |

### 指紋

### ASJC Scopus subject areas

- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering

### 引用此文

*Progress in Electromagnetics Research*,

*131*, 153-167. https://doi.org/10.2528/PIER12072901

**Complex photonic band structures in a photonic crystal containing lossy semiconductor INSB.** / Chang, T. W.; Wu, J. J.; Wu, C. J.

研究成果: 雜誌貢獻 › 文章

*Progress in Electromagnetics Research*, 卷 131, 頁 153-167. https://doi.org/10.2528/PIER12072901

}

TY - JOUR

T1 - Complex photonic band structures in a photonic crystal containing lossy semiconductor INSB

AU - Chang, T. W.

AU - Wu, J. J.

AU - Wu, C. J.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - In this work, complex photonic band structure (CPBS) in a semiconductor-dielectric photonic crystal (SDPC) operating at terahertz frequencies is theoretically investigated. The SDPC is air/(S/D)N /air where the dielectric layer D is SiO2, the semiconductor layer S is an intrinsic semiconductor InSb, and N is the number of periods. Using the experimental data for the strongly temperature- dependent plasma frequency and damping frequency for InSb, we calculate the CPBS for the infinite SDPC at distinct operating temperatures. The CPBS is then compared with the calculated transmittance, reflectance, and absorptance as well in the finite SDPC. Based on the calculated CPBS, the role played by the loss factor (damping frequency), in InSb is revealed. Additionally, from the calculated transmittance spectra, we further investigate the cutoff frequency for the SDPC. The dependences of cutoff frequency on the number of periods and the filling factor of semiconductor layer are numerically illustrated.

AB - In this work, complex photonic band structure (CPBS) in a semiconductor-dielectric photonic crystal (SDPC) operating at terahertz frequencies is theoretically investigated. The SDPC is air/(S/D)N /air where the dielectric layer D is SiO2, the semiconductor layer S is an intrinsic semiconductor InSb, and N is the number of periods. Using the experimental data for the strongly temperature- dependent plasma frequency and damping frequency for InSb, we calculate the CPBS for the infinite SDPC at distinct operating temperatures. The CPBS is then compared with the calculated transmittance, reflectance, and absorptance as well in the finite SDPC. Based on the calculated CPBS, the role played by the loss factor (damping frequency), in InSb is revealed. Additionally, from the calculated transmittance spectra, we further investigate the cutoff frequency for the SDPC. The dependences of cutoff frequency on the number of periods and the filling factor of semiconductor layer are numerically illustrated.

UR - http://www.scopus.com/inward/record.url?scp=84866624377&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866624377&partnerID=8YFLogxK

U2 - 10.2528/PIER12072901

DO - 10.2528/PIER12072901

M3 - Article

AN - SCOPUS:84866624377

VL - 131

SP - 153

EP - 167

JO - Progress in Electromagnetics Research

JF - Progress in Electromagnetics Research

SN - 1070-4698

ER -