Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Wei Hsiang Wang; Syue Ru Lyu; Elica Heredia; Shu Hao Liu; Pei hsun Jiang; Po Yung Liao; Ting Chang Chang; Hua Mao Chen

doi:10.1063/1.4974080

Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Wei Hsiang Wang, Syue Ru Lyu, Elica Heredia, Shu Hao Liu, Pei hsun Jiang, Po Yung Liao, Ting Chang Chang, Hua Mao Chen

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

11 引文斯高帕斯（Scopus）

摘要

We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

原文	英語
文章編號	022106
期刊	Applied Physics Letters
卷	110
發行號	2
DOIs	https://doi.org/10.1063/1.4974080
出版狀態	已發佈 - 2017 1月 9

ASJC Scopus subject areas

物理與天文學（雜項）

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abstract = "We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.",

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AU - Wang, Wei Hsiang

AU - Lyu, Syue Ru

AU - Heredia, Elica

AU - Liu, Shu Hao

AU - Jiang, Pei hsun

AU - Liao, Po Yung

AU - Chang, Ting Chang

AU - Chen, Hua Mao

PY - 2017/1/9

Y1 - 2017/1/9

N2 - We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

AB - We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

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Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

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