Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Wei Hsiang Wang, Syue Ru Lyu, Elica Heredia, Shu Hao Liu, Pei hsun Jiang, Po Yung Liao, Ting Chang Chang, Hua Mao Chen

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

原文英語
文章編號022106
期刊Applied Physics Letters
110
發行號2
DOIs
出版狀態已發佈 - 2017 一月 9

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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