Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

H. W. Hsu, H. S. Huang, C. C. Lee, S. Y. Chen, H. H. Teng, M. R. Peng, M. C. Wang, Chuan-Hsi Liu

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

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