摘要
The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 208-210 |
| 頁數 | 3 |
| 期刊 | Journal of Magnetism and Magnetic Materials |
| 卷 | 209 |
| 發行號 | 1-3 |
| DOIs | |
| 出版狀態 | 已發佈 - 2000 2月 |
| 對外發佈 | 是 |
| 事件 | Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan 持續時間: 1999 5月 24 → 1999 5月 25 |
ASJC Scopus subject areas
- 電子、光磁材料
- 凝聚態物理學
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