Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films

J. S. Tsay, Y. D. Yao, Y. Liou, S. F. Lee, C. S. Yang

研究成果: 雜誌貢獻Conference article

6 引文 (Scopus)

摘要

The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.

原文英語
頁(從 - 到)208-210
頁數3
期刊Journal of Magnetism and Magnetic Materials
209
發行號1-3
DOIs
出版狀態已發佈 - 2000 二月
事件Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan
持續時間: 1999 五月 241999 五月 25

指紋

Magnetic properties
magnetic properties
Magnetization
magnetization
Annealing
Atoms
annealing
Auger electron spectroscopy
Auger spectroscopy
electron spectroscopy
atoms
Thermodynamic stability
thermal stability
slopes
causes
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

引用此文

Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films. / Tsay, J. S.; Yao, Y. D.; Liou, Y.; Lee, S. F.; Yang, C. S.

於: Journal of Magnetism and Magnetic Materials, 卷 209, 編號 1-3, 02.2000, p. 208-210.

研究成果: 雜誌貢獻Conference article

Tsay, J. S. ; Yao, Y. D. ; Liou, Y. ; Lee, S. F. ; Yang, C. S. / Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films. 於: Journal of Magnetism and Magnetic Materials. 2000 ; 卷 209, 編號 1-3. 頁 208-210.
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AU - Yao, Y. D.

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AU - Lee, S. F.

AU - Yang, C. S.

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N2 - The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.

AB - The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.

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