摘要
A comparison of RTNO, N2O and N2O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Å is explored. The N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.
原文 | 英語 |
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頁(從 - 到) | 416-418 |
頁數 | 3 |
期刊 | IEEE Electron Device Letters |
卷 | 23 |
發行號 | 7 |
DOIs | |
出版狀態 | 已發佈 - 2002 7月 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電子、光磁材料
- 電氣與電子工程