Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Tung Ming Pan; Hsiu Shan Lin; Main Gwo Chen; Chuan Hsi Liu; Yih Jau Chang

doi:10.1109/LED.2002.1015223

Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Tung Ming Pan^*, Hsiu Shan Lin, Main Gwo Chen, Chuan Hsi Liu, Yih Jau Chang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

A comparison of RTNO, N₂O and N₂O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Å is explored. The N₂O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.

原文	英語
頁（從 - 到）	416-418
頁數	3
期刊	IEEE Electron Device Letters
卷	23
發行號	7
DOIs	https://doi.org/10.1109/LED.2002.1015223
出版狀態	已發佈 - 2002 7月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/LED.2002.1015223

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@article{e7ee3465e1f54938992ce3fd9cd9e595,

title = "Comparison of electrical and reliability characteristics of different 14 {\AA} oxynitride gate dielectrics",

abstract = "A comparison of RTNO, N2O and N2O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 {\AA} is explored. The N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.",

keywords = "NO, NO-ISSG, Oxynitride, RPN, RTNO, Ultrathin",

author = "Pan, {Tung Ming} and Lin, {Hsiu Shan} and Chen, {Main Gwo} and Liu, {Chuan Hsi} and Chang, {Yih Jau}",

year = "2002",

month = jul,

doi = "10.1109/LED.2002.1015223",

language = "English",

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AU - Pan, Tung Ming

AU - Lin, Hsiu Shan

AU - Chen, Main Gwo

AU - Liu, Chuan Hsi

AU - Chang, Yih Jau

PY - 2002/7

Y1 - 2002/7

N2 - A comparison of RTNO, N2O and N2O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Å is explored. The N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.

AB - A comparison of RTNO, N2O and N2O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Å is explored. The N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.

KW - NO

KW - NO-ISSG

KW - Oxynitride

KW - RPN

KW - RTNO

KW - Ultrathin

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DO - 10.1109/LED.2002.1015223

M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -

Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

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