Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Tung Ming Pan*, Hsiu Shan Lin, Main Gwo Chen, Chuan Hsi Liu, Yih Jau Chang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

A comparison of RTNO, N2O and N2O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Å is explored. The N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.

原文英語
頁(從 - 到)416-418
頁數3
期刊IEEE Electron Device Letters
23
發行號7
DOIs
出版狀態已發佈 - 2002 7月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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