摘要
In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed.
原文 | 英語 |
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文章編號 | 102906 |
期刊 | Applied Physics Letters |
卷 | 106 |
發行號 | 10 |
DOIs | |
出版狀態 | 已發佈 - 2015 3月 9 |
ASJC Scopus subject areas
- 物理與天文學(雜項)