Charge transport in amorphous Hf0.5Zr0.5O2

D. R. Islamov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng, A. Chin

研究成果: 雜誌貢獻文章

17 引文 (Scopus)

摘要

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed.

原文英語
文章編號102906
期刊Applied Physics Letters
106
發行號10
DOIs
出版狀態已發佈 - 2015 三月 9

指紋

traps
charge transfer
energy
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

引用此文

Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Cheng, C. H., & Chin, A. (2015). Charge transport in amorphous Hf0.5Zr0.5O2. Applied Physics Letters, 106(10), [102906]. https://doi.org/10.1063/1.4914900

Charge transport in amorphous Hf0.5Zr0.5O2. / Islamov, D. R.; Perevalov, T. V.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.

於: Applied Physics Letters, 卷 106, 編號 10, 102906, 09.03.2015.

研究成果: 雜誌貢獻文章

Islamov, DR, Perevalov, TV, Gritsenko, VA, Cheng, CH & Chin, A 2015, 'Charge transport in amorphous Hf0.5Zr0.5O2', Applied Physics Letters, 卷 106, 編號 10, 102906. https://doi.org/10.1063/1.4914900
Islamov DR, Perevalov TV, Gritsenko VA, Cheng CH, Chin A. Charge transport in amorphous Hf0.5Zr0.5O2. Applied Physics Letters. 2015 3月 9;106(10). 102906. https://doi.org/10.1063/1.4914900
Islamov, D. R. ; Perevalov, T. V. ; Gritsenko, V. A. ; Cheng, C. H. ; Chin, A. / Charge transport in amorphous Hf0.5Zr0.5O2. 於: Applied Physics Letters. 2015 ; 卷 106, 編號 10.
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