Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition

Chih Chiang Shen, Yu Te Hsu, Lain Jong Li, Hsiang Lin Liu

    研究成果: 雜誌貢獻文章同行評審

    60 引文 斯高帕斯(Scopus)

    摘要

    THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of chemical-vapordeposited monolayer MoS2 films. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency. Drude plasma frequency (∼7 THz) decreases with decreasing temperature while carrier relaxation time (∼26 fs) is almost temperature independent. The absorption spectrum of monolayer MoS2 shows a direct 1.95 eV band gap and charge transfer excitations that are ∼0:2 eV higher than those of the bulk counterpart. The ground-state exciton binding energy is found to be about 0.48 eV.

    原文英語
    文章編號125801
    期刊Applied Physics Express
    6
    發行號12
    DOIs
    出版狀態已發佈 - 2013 十二月 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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