Current-voltage characteristics of thin dielectric films of HfOx in p-Si/HfOx/Ni structures are analyzed. Experimental results are compared with various theoretical models: the Poole-Frenkel trap ionization model, the multiphonon trap ionization model, and the Schottky effect at the Ni/HfOx interface. It is shown that in spite of the good qualitative description of the experimental results by all models, only the multiphonon trap ionization model provides a quantitative description of the data.
|頁（從 - 到）||310-314|
|期刊||Optoelectronics, Instrumentation and Data Processing|
|出版狀態||已發佈 - 2014 五月 19|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering