Charge carrier transport mechanism in high-κ dielectrics and their based resistive memory cells

D. R. Islamov*, V. A. Gritsenko, C. H. Cheng, A. Chin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Current-voltage characteristics of thin dielectric films of HfOx in p-Si/HfOx/Ni structures are analyzed. Experimental results are compared with various theoretical models: the Poole-Frenkel trap ionization model, the multiphonon trap ionization model, and the Schottky effect at the Ni/HfOx interface. It is shown that in spite of the good qualitative description of the experimental results by all models, only the multiphonon trap ionization model provides a quantitative description of the data.

原文英語
頁(從 - 到)310-314
頁數5
期刊Optoelectronics, Instrumentation and Data Processing
50
發行號3
DOIs
出版狀態已發佈 - 2014 五月 19

ASJC Scopus subject areas

  • 儀器
  • 凝聚態物理學
  • 電氣與電子工程

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