Characterization of silicon-carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

Engineering & Materials Science

• MOSFET devices 100%
• Characterization (materials science) 75%
• Inversion layers 74%
• Silicon 67%
• Carbon 64%
• Strain relaxation 36%
• Strained silicon 35%
• Ultrahigh vacuum 33%
• Electron mobility 33%
• Substrates 30%
• Silanes 27%
• Chemical vapor deposition 24%
• Electrons 21%
• Thin films 20%
• Scattering 20%
• Heat treatment 18%
• Temperature 17%

Chemical Compounds

• Field Effect 85%
• Metal Oxide 71%
• Semiconductor 65%
• Alloy 59%
• Compound Mobility 43%
• Strain 39%
• Electron Mobility 34%
• Silane 27%
• Carbon Atom 26%
• Chemical Vapour Deposition 25%
• Vacuum 22%
• Ambient Reaction Temperature 15%
• Electron Particle 15%
• Surface 9%

Physics & Astronomy

• metal oxide semiconductors 87%
• field effect transistors 67%
• carbon 57%
• characterization 47%
• silicon 46%
• inversions 34%
• control equipment 26%
• strain distribution 25%
• silanes 23%
• electron mobility 22%
• ultrahigh vacuum 21%
• vapor deposition 16%
• augmentation 13%
• room temperature 11%
• thin films 11%
• scattering 10%
• electrons 9%