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Characterization of silicon-carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors
B. F. Hsieh, S. T. Chang
*
,
M. H. Lee
*
此作品的通信作者
光電工程學士學位學程
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
6
引文 斯高帕斯(Scopus)
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深入研究「Characterization of silicon-carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors」主題。共同形成了獨特的指紋。
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Engineering & Materials Science
MOSFET devices
100%
Characterization (materials science)
75%
Inversion layers
74%
Silicon
67%
Carbon
64%
Strain relaxation
36%
Strained silicon
35%
Ultrahigh vacuum
33%
Electron mobility
33%
Substrates
30%
Silanes
27%
Chemical vapor deposition
24%
Electrons
21%
Thin films
20%
Scattering
20%
Heat treatment
18%
Temperature
17%
Chemical Compounds
Field Effect
85%
Metal Oxide
71%
Semiconductor
65%
Alloy
59%
Compound Mobility
43%
Strain
39%
Electron Mobility
34%
Silane
27%
Carbon Atom
26%
Chemical Vapour Deposition
25%
Vacuum
22%
Ambient Reaction Temperature
15%
Electron Particle
15%
Surface
9%
Physics & Astronomy
metal oxide semiconductors
87%
field effect transistors
67%
carbon
57%
characterization
47%
silicon
46%
inversions
34%
control equipment
26%
strain distribution
25%
silanes
23%
electron mobility
22%
ultrahigh vacuum
21%
vapor deposition
16%
augmentation
13%
room temperature
11%
thin films
11%
scattering
10%
electrons
9%