Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation

Shunsuke Muto*, Sandip Dhara, Anindya Datta, Chi Wei Hsu, Chin Ting Wu, Ching Hsing Shen, Li Chyong Chen, Kuei Hsien Chen, Yuh Lin Wang, Tetsuo Tanabe, Tadashi Maruyama, Hong Ming Lin, Chia Chun Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.

原文英語
頁(從 - 到)435-439
頁數5
期刊Materials Transactions
45
發行號2
DOIs
出版狀態已發佈 - 2004 2月

ASJC Scopus subject areas

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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