Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou, C. Y. Liao, K. Y. Hsiang, C. Y. Lin, Y. D. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P. J. Tzeng, T. H. Hou, Y. T. Tang*, M. H. Lee*

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

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Physics

Material Science