Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou, C. Y. Liao, K. Y. Hsiang, C. Y. Lin, Y. D. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P. J. Tzeng, T. H. Hou, Y. T. Tang*, M. H. Lee

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

原文英語
主出版物標題2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665409230
DOIs
出版狀態已發佈 - 2022
事件2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, 臺灣
持續時間: 2022 4月 182022 4月 21

出版系列

名字2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

會議

會議2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區臺灣
城市Hsinchu
期間2022/04/182022/04/21

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電腦科學應用
  • 硬體和架構
  • 電氣與電子工程
  • 安全、風險、可靠性和品質

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