Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou; C. Y. Liao; K. Y. Hsiang; C. Y. Lin; Y. D. Lin; P. C. Yeh; C. Y. Wang; H. Y. Yang; P. J. Tzeng; T. H. Hou; Y. T. Tang; M. H. Lee

doi:10.1109/VLSI-TSA54299.2022.9771012

Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou, C. Y. Liao, K. Y. Hsiang, C. Y. Lin, Y. D. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P. J. Tzeng, T. H. Hou, Y. T. Tang^*, M. H. Lee^*

^*此作品的通信作者

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

原文	英語
主出版物標題	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771012
出版狀態	已發佈 - 2022
事件	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, 臺灣持續時間: 2022 4月 18 → 2022 4月 21

出版系列

名字	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

會議

會議	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區	臺灣
城市	Hsinchu
期間	2022/04/18 → 2022/04/21

ASJC Scopus subject areas

電子、光磁材料
電腦科學應用
硬體和架構
電氣與電子工程
安全、風險、可靠性和品質

存取文件

10.1109/VLSI-TSA54299.2022.9771012

其它文件與鏈接

引用此

Lou, Z. F., Liao, C. Y., Hsiang, K. Y., Lin, C. Y., Lin, Y. D., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Hou, T. H., Tang, Y. T., & Lee, M. H. (2022). Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771012

Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. / Lou, Z. F.; Liao, C. Y.; Hsiang, K. Y. 等.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Lou, ZF, Liao, CY, Hsiang, KY, Lin, CY, Lin, YD, Yeh, PC, Wang, CY, Yang, HY, Tzeng, PJ, Hou, TH, Tang, YT & Lee, MH 2022, Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, 臺灣, 2022/04/18. https://doi.org/10.1109/VLSI-TSA54299.2022.9771012

Lou ZF, Liao CY, Hsiang KY, Lin CY, Lin YD, Yeh PC 等. Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771012

Lou, Z. F. ; Liao, C. Y. ; Hsiang, K. Y. 等. / Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

@inproceedings{1a8920e704444102bf051ec09aa3aae1,

title = "Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory",

abstract = "A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.",

keywords = "Double HZO, FeFET, ferroelectric",

author = "Lou, {Z. F.} and Liao, {C. Y.} and Hsiang, {K. Y.} and Lin, {C. Y.} and Lin, {Y. D.} and Yeh, {P. C.} and Wang, {C. Y.} and Yang, {H. Y.} and Tzeng, {P. J.} and Hou, {T. H.} and Tang, {Y. T.} and Lee, {M. H.}",

note = "Funding Information: The authors are grateful for the funding support from the National Science Council (MOST 110-2218-E-A49-014MBK, 110-2218-E-003-005, 110-2622-8-002-014), and the processes were supported by Taiwan Semiconductor Research Institute (TSRI) & Nano Facility Center (NFC), Taiwan. Funding Information: The funding support from the National Science Council, Taiwan Semiconductor Research Institute (TSRI) & Nano Facility Center (NFC), Taiwan. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771012",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

}

TY - GEN

T1 - Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

AU - Lou, Z. F.

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Lin, C. Y.

AU - Lin, Y. D.

AU - Yeh, P. C.

AU - Wang, C. Y.

AU - Yang, H. Y.

AU - Tzeng, P. J.

AU - Hou, T. H.

AU - Tang, Y. T.

AU - Lee, M. H.

N1 - Funding Information: The authors are grateful for the funding support from the National Science Council (MOST 110-2218-E-A49-014MBK, 110-2218-E-003-005, 110-2622-8-002-014), and the processes were supported by Taiwan Semiconductor Research Institute (TSRI) & Nano Facility Center (NFC), Taiwan. Funding Information: The funding support from the National Science Council, Taiwan Semiconductor Research Institute (TSRI) & Nano Facility Center (NFC), Taiwan. Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

AB - A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

KW - Double HZO

KW - FeFET

KW - ferroelectric

UR - http://www.scopus.com/inward/record.url?scp=85130432209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85130432209&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA54299.2022.9771012

DO - 10.1109/VLSI-TSA54299.2022.9771012

M3 - Conference contribution

AN - SCOPUS:85130432209

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Y2 - 18 April 2022 through 21 April 2022

ER -