Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media

Sin Liang Ou, Chin-Pao Cheng, Chin Yen Yeh, Chung Jen Chung, Kuo Sheng Kao, Re Ching Lin

研究成果: 書貢獻/報告類型會議論文篇章

7 引文 斯高帕斯(Scopus)

摘要

The In10GexSb52-xSn23Te 15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In 10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn 23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb 52-xSn23Te15 films with x = 2∼9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

原文英語
主出版物標題Manufacturing Process Technology
頁面4430-4433
頁數4
DOIs
出版狀態已發佈 - 2011
事件2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011 - Guilin, 中国
持續時間: 2011 四月 92011 四月 11

出版系列

名字Advanced Materials Research
189-193
ISSN(列印)1022-6680

其他

其他2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011
國家中国
城市Guilin
期間2011/04/092011/04/11

ASJC Scopus subject areas

  • Engineering(all)

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