Characteristics of cerium oxide for metal-insulator-metal capacitors

C. H. Cheng, H. H. Hsu, W. B. Chen, Albert Chin, F. S. Yeh

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)


In this article, we describe our successful fabrication of a Ce O 2 metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10-7 A/ cm 2 at -1 V and a small VCC-α∼421 ppm/ V 2 were obtained at a high 10.8 fF/μ m2 density for a Pt/Ce O2 /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O2 dielectric (κ∼20) was much better than the reported dielectrics of Hf O2, Tb-Hf O2, and Al2 O 3 -Hf O2 at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O2 dielectric and the high work-function metals.

頁(從 - 到)H16-H19
期刊Electrochemical and Solid-State Letters
出版狀態已發佈 - 2009

ASJC Scopus subject areas

  • 一般化學工程
  • 一般材料科學
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程


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