Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

Tian Li Wu, Chih Fang Huang, Chun Hu Cheng

研究成果: 書貢獻/報告類型會議貢獻

摘要

This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

原文英語
主出版物標題Wide Bandgap Semiconductor Materials and Devices 12
頁面173-183
頁數11
版本6
DOIs
出版狀態已發佈 - 2011 八月 1
事件Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, 加拿大
持續時間: 2011 五月 12011 五月 6

出版系列

名字ECS Transactions
號碼6
35
ISSN(列印)1938-5862
ISSN(電子)1938-6737

其他

其他Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
國家加拿大
城市Montreal, QC
期間11/5/111/5/6

ASJC Scopus subject areas

  • Engineering(all)

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  • 引用此

    Wu, T. L., Huang, C. F., & Cheng, C. H. (2011). Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. 於 Wide Bandgap Semiconductor Materials and Devices 12 (6 編輯, 頁 173-183). (ECS Transactions; 卷 35, 編號 6). https://doi.org/10.1149/1.3570859