TY - GEN
T1 - CDM ESD protection design with initial-on concept in nanoscale CMOS process
AU - Lin, Chun Yu
AU - Ker, Ming Dou
PY - 2010
Y1 - 2010
N2 - Integrated circuits (ICs) have been fabricated with thinner gate oxides to achieve higher speed and lower power consumption in nanoscale CMOS processes. However, the charged-device-model (CDM) electrostatic discharge (ESD) events became more critical because of the thinner gate oxide in nanoscale CMOS transistors and the larger die size for the system-on-chip (SoC) applications. Thus, effective on-chip ESD protection design against CDM ESD stresses has become more challenging to be implemented. A novel on-chip ESD protection design against CDM ESD events was proposed in this work, and its performance has been verified by the silicon chip fabricated in 55-nm CMOS process.
AB - Integrated circuits (ICs) have been fabricated with thinner gate oxides to achieve higher speed and lower power consumption in nanoscale CMOS processes. However, the charged-device-model (CDM) electrostatic discharge (ESD) events became more critical because of the thinner gate oxide in nanoscale CMOS transistors and the larger die size for the system-on-chip (SoC) applications. Thus, effective on-chip ESD protection design against CDM ESD stresses has become more challenging to be implemented. A novel on-chip ESD protection design against CDM ESD events was proposed in this work, and its performance has been verified by the silicon chip fabricated in 55-nm CMOS process.
UR - http://www.scopus.com/inward/record.url?scp=77956438525&partnerID=8YFLogxK
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U2 - 10.1109/IPFA.2010.5532223
DO - 10.1109/IPFA.2010.5532223
M3 - Conference contribution
AN - SCOPUS:77956438525
SN - 9781424455973
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
BT - IPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits
T2 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010
Y2 - 5 July 2010 through 9 July 2010
ER -