Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures

H. Y. Lin; Y. F. Chen; J. G. Wu; D. I. Wang; C. C. Chen

doi:10.1063/1.2197311

Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures

H. Y. Lin^*, Y. F. Chen, J. G. Wu, D. I. Wang, C. C. Chen

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

106 引文斯高帕斯（Scopus）

摘要

Metal-semiconductor core-shell nanostructures have been synthesized to explore the influence of metal nanostructures on the photoluminescence of semiconductors. Up to 40 times enhancement in the emission intensity was observed in the Au-CdS core-shell nanostructures. The mechanism where the excited electrons on Au surface by surface plasmon wave transfer to the conduction band of the CdS shell and recombine with holes in the valence band was proposed to interpret the enhancement. Our model can also be used to explain the quenched emission in FePt-CdS core-shell nanostructures and Au-CdSe nanodumbbells.

原文	英語
文章編號	161911
期刊	Applied Physics Letters
卷	88
發行號	16
DOIs	https://doi.org/10.1063/1.2197311
出版狀態	已發佈 - 2006 4月 17
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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title = "Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures",

abstract = "Metal-semiconductor core-shell nanostructures have been synthesized to explore the influence of metal nanostructures on the photoluminescence of semiconductors. Up to 40 times enhancement in the emission intensity was observed in the Au-CdS core-shell nanostructures. The mechanism where the excited electrons on Au surface by surface plasmon wave transfer to the conduction band of the CdS shell and recombine with holes in the valence band was proposed to interpret the enhancement. Our model can also be used to explain the quenched emission in FePt-CdS core-shell nanostructures and Au-CdSe nanodumbbells.",

author = "Lin, {H. Y.} and Chen, {Y. F.} and Wu, {J. G.} and Wang, {D. I.} and Chen, {C. C.}",

note = "Funding Information: This work was supported by the National Science Council and Ministry of Education of the Republic of China.",

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AU - Lin, H. Y.

AU - Chen, Y. F.

AU - Wu, J. G.

AU - Wang, D. I.

AU - Chen, C. C.

N1 - Funding Information: This work was supported by the National Science Council and Ministry of Education of the Republic of China.

PY - 2006/4/17

Y1 - 2006/4/17

N2 - Metal-semiconductor core-shell nanostructures have been synthesized to explore the influence of metal nanostructures on the photoluminescence of semiconductors. Up to 40 times enhancement in the emission intensity was observed in the Au-CdS core-shell nanostructures. The mechanism where the excited electrons on Au surface by surface plasmon wave transfer to the conduction band of the CdS shell and recombine with holes in the valence band was proposed to interpret the enhancement. Our model can also be used to explain the quenched emission in FePt-CdS core-shell nanostructures and Au-CdSe nanodumbbells.

AB - Metal-semiconductor core-shell nanostructures have been synthesized to explore the influence of metal nanostructures on the photoluminescence of semiconductors. Up to 40 times enhancement in the emission intensity was observed in the Au-CdS core-shell nanostructures. The mechanism where the excited electrons on Au surface by surface plasmon wave transfer to the conduction band of the CdS shell and recombine with holes in the valence band was proposed to interpret the enhancement. Our model can also be used to explain the quenched emission in FePt-CdS core-shell nanostructures and Au-CdSe nanodumbbells.

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Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures

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