Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures

H. Y. Lin; Y. F. Chen; J. G. Wu; D. I. Wang; C. C. Chen

doi:10.1063/1.2197311

Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures

H. Y. Lin, Y. F. Chen, J. G. Wu, D. I. Wang, C. C. Chen

化學系

研究成果: 雜誌貢獻 › 文章

99 引文斯高帕斯（Scopus）

摘要

Metal-semiconductor core-shell nanostructures have been synthesized to explore the influence of metal nanostructures on the photoluminescence of semiconductors. Up to 40 times enhancement in the emission intensity was observed in the Au-CdS core-shell nanostructures. The mechanism where the excited electrons on Au surface by surface plasmon wave transfer to the conduction band of the CdS shell and recombine with holes in the valence band was proposed to interpret the enhancement. Our model can also be used to explain the quenched emission in FePt-CdS core-shell nanostructures and Au-CdSe nanodumbbells.

原文	英語
文章編號	161911
期刊	Applied Physics Letters
卷	88
發行號	16
DOIs	https://doi.org/10.1063/1.2197311
出版狀態	已發佈 - 2006 四月 17

指紋

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

引用此

Lin, H. Y., Chen, Y. F., Wu, J. G., Wang, D. I., & Chen, C. C. (2006). Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures. Applied Physics Letters, 88(16), [161911]. https://doi.org/10.1063/1.2197311

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存取文件

10.1063/1.2197311